METODO PER LA FABBRICAZIONE DI UN DISPOSITIVO SEMICONDUTTORE E DISPOSITIVO SEMICONDUTTORE FABBRICATO CON L'AUSILIO DI TALE METODO

摘要

In Locos N-channel MOST-IC's underpasses can be obtained below the locos pattern by performing, at the area where the underpasses are to be formed, an As or Sb implantation prior to providing the locos. By using the nitride mask as an implantation mask, the locos and the source/drain zones of the transistors can be provided in a self-registering manner with respect to the underpasses.