| 摘要 |
PURPOSE:To enable to highly integrate a semiconductor integrated circuit device by electrically connecting the first electrode to one semiconductor region of an MISFET and employing a semiconductor substrate for the second electrode for forming a memory capacity element, thereby reducing the influence of unnecessary minority carrier. CONSTITUTION:A memory cell is specified by surrounding the periphery of a field insulating film 2 by a pair of patterns, and charge of hole to become information is, for example, stored by the first electrode 7 of a capacity element and the second electrode 4 of a capctity element at both sides of an insulating film 3 for forming a dielectric of a memory capacity element. In order to obtain charge of holes or depletion layer charge to be stored in the capacity element at both sides of the film 3, a threshold voltage higher than the operating voltage to be applied to the electrode 7 is provided near the surface of the substrate 1. The electrode 7 is provided on the film 3, the one end is electrically connected to the one semiconductor region 12 of the MISFET through a connecting hole 5 and a semiconductor region 6, thereby forming a memory capacity element C. |
