| 摘要 |
PURPOSE:To enable laser oscillation at a low threshold value by flattening the surface as a whole, so as to stably simplify the oscillation mode, by a method wherein a laser element having a CPS type bent active region is built in, so as to be contained in a recess previsouly provided in a semi-insulation substrate. CONSTITUTION:After the part other than two-stage recesses 21 and 22 provided in the GaAs semi-insulatiin substrate 1 is coated with an SiO2 film 3, crystal- growth is accomplished in the recesses 21 and 22 with conductive GaAs2 doped with N<+> type Se by the MOCVD method. Next, a groove 16 formed at the position corresponding to the recess 22, the second recess being formed more widely by including it; thereafter doublehetero structual crystal growth is carried out by the MOCVD method again with SiO2 and the like as a mask, in such a manner that the second recess is exactly filled, and accordingly a known semiconductor laser is constructed. In this case, an active layer 5 bends at the part of the groove 16. Then, Zn is diffused by corresponding to the laser active region, thus forming a current path 8, an electronic circuit part is formed by the side of the laser part, and both are connected. |
