| 摘要 |
PURPOSE:To enable to set a high accuracy resistance value in a super miniature resistor element by a method wherein a polycrystalline Si film of an extremely high specific resistance is formed, and its partial region is added with impurities. CONSTITUTION:An Si oxide film 2 is produced by thermal oxidation of an Si substrate 1, and the polycrystalline Si film 13 is produced and adhered over the entire surface of the substrate by vapor phase reaction. The part of lateral stretching of an Si oxide film 6 is covered with a photo resist, and a photo resist pattern 12 is formed so as to obtain a desired resistor width W2. Thereafter, boron atoms are ion-implanted over the entire surface of the substrate shallowly by a desired amount at a low accelerating voltage, and then the impurity atoms are activated by heat treatment in nitrogen, resulting in the formation of a resistor region 17 of a nearly constant impurity concentration. Here, the depth t2 of the resistor region can be controlled by the accelerating voltage for ion implantation and the thicknesses of an Si oxide film 4 and an Si nitride film 5. On the other hand, the width W2 of the resistor region can be controlled entirely independently of the lateral stretching width W of the Si oxide film 6. |
