| 摘要 |
PURPOSE:To enable to unify the temperature of a wafer by reusing radiant energy at a high-frequency heating vapor growth device by a method wherein a work coil is provided under a susceptor to be put on with the wafer, and the top board of a bell jar to cover the whole is formed low at the central part, and high at the outer peripheral part. CONSTITUTION:The top board 7 of a bell jar 5' is formed in a shape made low at the central part 8, and high at the outer peripheral part 9. Accordingly, energy emitted from a susceptor 2 is reflected uniformly to the whole surface of the susceptor 2 according to the top board 7. To take reflected energy thereof in temperature deciding elements is made to possible, a temperature difference between the point A and the point B is removed, and to remove almost the slipping defect of the wafer is made to possible. |
