| 摘要 |
PURPOSE:To obtain a photoconductive member, photoconductive characteristics thereof are stable, which belongs to an all-environment type and which has excellent photo sensitivity characteristics on the long-wave length side, light-resistant fatigue, etc., by forming a photoreception layer having a first amorphous layer containing Si and a second amorphous layer, which contains Si and Ge and in which Ge atoms unequally distribute, while containing O atoms. CONSTITUTION:A photoconductive member 100 has a substrate 101 for the photoconductive member and a photoreception layer 102 having photoconductivity, and the photoreception layer 102 has a first amorphous layer 103 constituted by an amorphous material containing silicon atoms and a second amorphous layer 104, which is constituted by an amorphous material containing silicon atoms and germanium atoms and in which the state of the distribution of germanium atoms is made unequal, while containing oxygen atoms. The photoreception layer such as one 102 having sufficient volume resistance and photoconductivity is formed on the substrate 101 for the photoconductive member. The photoreception layer 102 has the first amorphous layer ( I ) 103 composed of a-Si(H,X) and the second amorphous layer 104, which is composed of a-SiGe(H,X) on the layer 103 and unequally contains Ge atoms in the direction of layer thickness, while containing oxygen atoms. |
