| 摘要 |
PURPOSE:To increase a stored charge amount without deteriorating sensitivity by providing an electrode to an upper part of at least a part of a charge storage section arranged linearly or two-dimensionally via a thin insulation film and keeping the potential of the electrode to a prescribed potential at least during a partial time of a storage period. CONSTITUTION:The electrode 31 is constituted of a material such as polysilicon and its potential is kept the same as that of a Pchannel silicon substrate 22 via a p layer 34. SiO2 is used as an insulation film 32 and assuming the thickness as 500Angstrom , the capacity is nearly 6.9X10<-4>pF/um<2>. Since the junction capacitance is nearly 0.8X10<-4>pF/mum<2> when impurity density is 2.5X10<15>cm<-3> and a bias voltage is 3V, the effect of the capacitance formed between the electrode 31 and an n<+> layer 33 is large even at a narrow region below vertical signal lines 181 and 182, and contributes largely to the increase in a dynamic range. Further, the sensitivity is not deteriorated in comparison with the conventional film. |
