| 摘要 |
PURPOSE:To obtain N or P type a-Si having a desired electroc conductivity on a substrate, by mixing a V- or III- group compound into silane gas represented by sinH2n+2 and by irradiating light of a wavelength by shorter than 300nm to the same. CONSTITUTION:For the purpose of photolyzing silane gas represented by the general formula of SinH2n+2 (n>1) and depositing it on a substrate, hydride, halogenide or the like of phosphorus or Sb is mixed to obtain N type a-Si, while hydride or halogenide or B or an organic compound of Al is added to obtain P type a-Si. The adding proportion is chosen so that the atomic ratio of the additive and the material silane represented by x/Si is 10<-6x/Si<1. The decomposition pressure is not specified and the formation temperature of 150-500 deg.C is preferred for properties of the deposition film. As for the wavelengths of irradiation light, ultra violet light of 185nm and of 254nm is easy to access and to handle. An output of 10-10<3>w and an illuminance of 0.1-100mw/cm<2> are sufficient for the operation. According to this constitution, the electroc conductivity of the deposited a-Si can be freely controlled from N type resistance to P type resistance. |
