| 摘要 |
PURPOSE:To titled apparatus, constructed to form a drill-like protrusion directing inward at the bottom of a vessel and increase the thermal conductivity from that of the formed crystals, and capable of preventing occurrence of many grain boundaries in the initial stage and producing effectively large-diameter crystals. CONSTITUTION:Crystals of Cd and Te at a chemical equivalent ratio are vacuum sealed in a cylindrical vessel 1, which is then contained in a heating furance 3, having a given length, and capable of setting a given temperature gradient to grow CdTe crystals in a crystal growth apparatus. In the apparatus, a drill-like protrusion 20 is formed from the central part of the bottom of the vessel 1 toward the interior of the vessel 1, and the protrusion 20 is formed from, e.g. graphite, to increase the thermal conductivity from that of the formed crystals. For example, when the vessel 1 is lowered from a region (a) at 1,150 deg.C to a region (b), the temperature is decreased from the tip part of the graphite 20 having a high thermal conductivity. Therefore, crystallization is started from the vicinity of the central part of the bottom 2 in the vessel 1 to form a convex state along the shape of the graphite 20. The crystallization moves in the tube wall direction even if there are grain boundaries 10 in crystals 9. The grain boundaried 10 growing on the tube wall do not enter the crystals 9, and the single crystals can be grown with certainty.
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