| 摘要 |
PURPOSE:To previously inspect whether a proximity effect is adequately corrected or not and exposure pattern can be resolved or not by correcting proximity effect and determining exposure data based on the exposure condition for the specified design pattern data. CONSTITUTION:The data having a design pattern indicated by a solid line is stored in the memory. The pattern indicated by the broken line indicates the region for correcting the proximity effect for obtaining the design pattern and for actual irradiation of electron beam. For inspection of exposure pattern, the design pattern data is read from the memory and amount of correction is calculated. A plurality of sample points are provided on the design pattern, a scat- tered electron beam intensity on the sample points by electron beam irradiation for the exposure data is calculated and a ratio of scattered electron beam intensity at the point where the influence of proximity effect can be neglegible to such intensity is calculated. Using such ratio, a pattern size at the sampling point is calculated and evaluation is carried out whether the maximum and minimum values are in the preset range or not. |
