发明名称 ELECTRON BEAM EXPOSURE
摘要 PURPOSE:To obtain a high precision pattern by drawing a pattern which requires correction with specific quantity of electron beam irradiation among exposure patterns obtained by diving a pattern which is to be formed into rectangles. CONSTITUTION:In order to correct the extent of each pattern, at first, quantity of dimension correction Si within a pattern and quantity of irradiation Qi to obtain the dimensions of a required pattern are sought. Among patterns A and B, if the pattern A requires correction, assume QA is quantity of irradiation of the pattern A, fB is strength of effect on a sample point (a) caused by the pattern B, FB is strength of effect on a sample point (b) caused by the pattern B and (q) is quantity of irradiation of the pattern A without considering effects of surrounding patterns, then quantity of irradiation QA of the minute pattern A becomes approximately, QA=q(1-fB/FB). Considering effects of surrounding patterns, quantity of correction of the dimensions between patterns is also sought for pattern data.
申请公布号 JPS6041222(A) 申请公布日期 1985.03.04
申请号 JP19830149826 申请日期 1983.08.17
申请人 FUJITSU KK 发明人 MACHIDA YASUHIDE
分类号 G03F7/20;H01L21/027;H01L21/30;(IPC1-7):H01L21/30 主分类号 G03F7/20
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