| 摘要 |
PURPOSE:To simplify a process, and to form a multilayer wiring by simultaneously executing the etching of a wiring material layer and the removal of a photo-resist pattern. CONSTITUTION:A photo-resist pattern 14 on a wiring material layer 13 applied in size thicker than desired finishing film thickness is formed in size thinner than the film thickness of the wiring material layer 13. Dry etching 15 is continued until the photo-resist pattern 14 is removed. The etching is executed under conditions in which the ratio of the etching rates of the photo-resist pattern 14 and the wiring material layer 13 is equal and anisotropic etching characteristics are given. Dry etching 16 is continued until an insulating film 12 as a foundation in the thin section of the wiring material layer 13 is exposed under conditions having isotropic etching characteristics. An intermediate insulating film 17 is applied, but a smooth surface shape is obtained at the step of application in the intermediate insulating film 17 because a first layer wiring 13' is formed in a trapezoid section, and a second layer wiring material layer 18 can be formed on the film 17. |
