| 摘要 |
PURPOSE:To enable to etch a Ta2O5 thin film in high precision by a method wherein a reaction with active seeds generated in plasma and having an accelerating property according to an electric field are utilized. CONSTITUTION:A Ta2O5 thin film formed on a substrate is arranged on a cathode electrode 2, and the inside of a vacuum chamber 1 is evacuated according to a vacuum pump 6. After then, fluorine containing organic compound gas such as CF4 gas, for example, is introduced from a reaction gas introducing port 5. Then, high-frequency electric power source is applied between the cathode electrode 2 and an anode electrode 3 according to a high-frequency electric power source 4 to generate plasma of fluorine containing organic compound gas, and the Ta2O5 thin film is etched. Namely, TaF5 is generated on the surface of the Ta2O5 film exposed in plasma according to a reaction between active seeds such as CF3 radicals, F radicals, F<-> ions, etc. generated in plasma of fluorine containing organic compound gas such as CF4 gas, and the Ta2O5 film, and by vaporizing the TaF5 thereof, etching is accelerated. |
