| 摘要 |
PURPOSE:To eliminate the grid defects produced in case of recrystallizing Si film on insulating film by zone melting process producing crystalline thin film with excellent quality and less dispersion by a method wherein multiple heat sources condensing continuously lighting type incoherent light are provided while a device to move the heat sources and sample relatively is provided at the same time. CONSTITUTION:A sample 26 is heated up to 400-1,200 deg.C on a hot plate 27. A scanning heat source composed of linear lamps 24, 25 and condensing reflectors 22, 23 is driven by a driving system. The first lamp located forward in the scanning direction is focussed on the surface of the sample 26 to melt the region to be indicated while the second lamp located backward illuminates the region slightly backward of the region to be irradiated by the first lamp with the focus deviated from the sampe 26. Through these procedures, the cooling speed of the melted region is reduced to make the polycrystalline Si thin film of the sample 26 excellent monocrystalline film eliminating any grid defects. |
