| 摘要 |
PURPOSE:To prevent the irregularity of density distribution of gas in a chamber by a method wherein ultrasonic waves are transmitted into the chamber, thereby enabling to make gas density uniform in the chamber. CONSTITUTION:In the case of a semiconductor heat diffusing furnace wherein an ultrasonic wave oscillation source is provided at a gas flow-in part, wafers 7 are arranged in a quartz tube 4 in face-to-face position, and they are heated up using a heater 6 and an equalizing tube 5 consisting of silicon carbide. Also, an ultrasonic oscillation source 3 having crystal and the like as an oscillation source is provided at the end part of said quartz tube 4. The gas supplied from a gas supply system is activated by the ultrasonic waves sent from an ultrasonic wave oscillation source 3, and the gas is distributed throughout the quartz tube uniformly. Also, the molecule located on the wafer surface is activated by the ultrasonic waves, and the reaction speed on the wafers is increased, thereby enabling to cut down the processing period. |
