| 摘要 |
PURPOSE:To obtain multilayer Si wiring having a small contact resistance, in such a case that an insulating film is deposited on the surface of a semiconductor substrate, a first Si wiring consisting of polycrystalline Si of specified shape is provided thereon, entire part is covered with an interlayer insulating film, an aperture is formed thereon and a second Si wiring of the polycrystalline Si is deposited therein, by providing a metal film such as Ti, Cu between the first and second Si wirings. CONSTITUTION:An insulating film 12 is deposited on an Si substrate 11 and a first Si wiring 13 of the specified shape consisting of polycrystalline Si is formed thereon. The wiring 13 is sourrounded by interlayer insulating film 14, an aperture is formed thereon and a second Si wiring 16 of polycrystalline Si to be connected to the wiring 13 is deposited thereon. In this case, a metal film such as Ti, Cu is provided between said wirings 13 and 16 in view of lowering a contact resistance value of Si wirings. |
