| 摘要 |
PURPOSE:To prevent disconnections and short-circuits by realization of the flattening of the surface of an interlayer insulation film by a method wherein the insulation film is put in a multilayer structure by the bias sputtering technique. CONSTITUTION:An oxide film 3a doped with phosphorus and having a sufficiently low viscosity is grown in chemical vapor phase, and next an oxide film 3b is deposited in superposition by the bias sputtering method. Since bias sputtering etches an oxide film being deposited while the film is deposited, selection of a condition of reverse bias enables to deposit substances while the surface is flattened. Otherwise, it is also available that an oxide film 3c of a sufficiently low viscosity is deposited in the atmosphere of phosphorus by sputtering, and that a non-doped oxide film 3d is successively deposited by the sputtering method wherein a reverse bias is applied. This construction enables to obtain the interlayer insulation film whose surface is flattened, causing no disconnections and short-circuits in the wiring formed in the upper layer thereof. |
