| 摘要 |
PURPOSE:To make small a resistance and simultaneously make small a contact resistance, in such a case that wirings made of a metal film and a silicide film are formed on a semiconductor substrate, by depositing an Si film to the one side surface, front surface, bottom surface or entire circumference. CONSTITUTION:An insulating film 12 is deposited on the surface of an Si substrate 11 and three layer structure of Si film 14, silicide film or metal film 13 and Si film 15 is formed for providing the wiring on such insulating film. Or the insulating film 12 is deposited on the Si substrate 11 and a film 23 consisting of a divided metal or silicide film is provided separately. In this case, an Si film 24 is deposited opposingly to these films. Or the entire part of metal or silicide film 33 provided separately is surrounded by an Si film 34. Thus, an Si film is provided between the wirings and thereby a resistance value or contact resistance value can be lowered. |
