| 摘要 |
PURPOSE:To reduce the resistance value of an Si wiring and the contact resistance with an upper Si wiring by covering the bottom and side surfaces of the Si wiring with a metallic film. CONSTITUTION:A diffused layer 12 and an insulation film 13 are provided on the surface of an Si substrate 11, a Ti film 14 is formed to a recess from, an Si wiring 15 is buried therein, and the layers 12 and the Si wiring are connected by means of a connection hole. The structure of Si wiring by this structure extremely reduces in contact resistance. |
