| 摘要 |
PURPOSE:To obtain a film of no property variation in low cost attracting Na in a substrate to the back side of the substrate by applying negative electric field from the surface of the formed film to the direction of the bottom of the substrate in the forming of the semiconductor film and in the process of treatment which requires heating. CONSTITUTION:On a glass substrate 1, an SiO2 film 2 is coated on it, and an Si film 3 is deposited wherein laser is made to irradiated for annealing as follows. The substrate 1 is placed on a cathode 4 and on the upper surface of the film 3, an anode plate is installed. Between these electrodes, a direct currnet power source 5 is connected and negative electric field is applied from the film 3 to the direction of the substrate 1. In this construction, the film 3 is heated by annealing and thermal diffusion of Na ion in the substrate 1 to the direction of the film 2 is prevented and is directed to the back side of the substrate 1. This enables obtaining the film 3 which has stable characteristics in low cost. |
