| 摘要 |
PURPOSE:To prevent the contact failure between a substrate and a beam lead by method wherein the end of the surface of the semiconductor surface is provided with a step, and the beam lead is formed on the step. CONSTITUTION:The element forming surface of a substrate 1 is covered with an SiO2 and an Si3N4 film 3, and the line for isolating the device is provided with an SiO2 film 5 severl mum or more thick. A metallic electrode wiring including the beam lead 4 is applied on the film 3. Next, the substrate is stuck to a quartz plate, etc. with wax and then chemically etched from the back, resulting in element isolation. By this construction, the gap between both of the substrate and the beam becomes enlarged, which can avoid the contact failure due to some deformation of the lead in assembly, and accordingly the workability and the yield both improve. |
