| 摘要 |
PURPOSE:To obtain a low voltage driving electric power amplifying transistor of low cost without enlarging the chip of the transistor by a method wherein a silicon dioxide film is formed according to the vapor phase growth method as to make thickness of the silicon dioxide film to be the specified thickness, and an electrode for base bonding region is formed on the silicon dioxide film on an emitter region. CONSTITUTION:Base diffusion is performed on a silicon epitaxial substrate 1 to form a base region 2. Moreover emitter diffusion is performed in the base region 2 to form an emitter region 3. After then, a thermal oxide film 9 is formed on the whole surface, emitter and base contact windows are opened leaving the silicon dioxide film 9 necessary for formation of a base bonding pad region 5' in the emitter region part, moreover the silicon dioxide film 9 is formed at film thickness of 1mum or more according to the vapor phase growth method, moreover emitter and base contact holes are opened leaving the silicon dioxide film 9 on the surface of the collector region 1 of the base bonding pad region 5' of the emitter region part 3, on the surface of a collector-base junction part 7 and on the surface of an emitter-base junction part 8, and the aluminum electrodes 6, 5 of an emitter and a base are formed. |
