| 摘要 |
PURPOSE:To prevent the extension of the diffusion of an impurity in a semiconductor substrate by specifying the relationship of the time and a temperature, through which the substrate is kept at 1,000 deg.C or higher, in a reflowing process. CONSTITUTION:When phosphorus silica glass or phosphorus boron silica glass applied on a semiconductor is heated and fluidized, the relationship of the time (t) and a temperature T through which a semiconductor substrate is kept at a temperature of 1,000 deg.C or higher is prescribed as shown in the formula. The depth of a P-N junction displaying the degree of the diffusion of an impurity increases only by approximately 60% when an integral value is 1,600 or less, and can correspond to the demand of the fining of a crystal sufficiently. The glass is fluidized insufficiently when the integral value is low, and there is large possibility in which wirings are disconnected when said value is smaller than 120. |
