A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, AND A DEVICE SO MANUFACTURED

摘要

The method provides for the simultaneous formation of diffused regions (14a, 14b) with different diffusion depths. A polycrystalline semiconductor layer (11), different parts of which are of different thicknesses, is formed on the surface of a semiconductor substrate (1) on which a diffusion mask (7) with diffusion windows (8, 9 and 10) is formed. By impurity diffusion from the surface of the polycrystalline semiconductor layer (11) a comparatively shallow diffused region (14b) and a comparatively deep diffused region (14a) are formed in a single diffusion process, respectively under a comparatively thick part of the polycrystalline semiconductor layer and a comparatively thin part of the polycrystalline semiconductor layer.