| 摘要 |
PURPOSE:To obtain excellent effects in a change into low threshold currents, astigmatism, etc. by each forming a gain confinement type waveguide selectively in the axial direction of a resonator and an index confinement type waveguide to a residual section communicated with said waveguide. CONSTITUTION:In a GaAs/GaAlAs group semiconductor laser, a gain confinement type waveguide section 8A is formed so that a P type conversion region 7 does not penetrate an N type Ga1-xAlxAs active layer 3. The region 7 penetrates the layer 3 in an index confinement type waveguide section 8B. Consequently, P-N junctions are formed in arrow 7A and 7B sections. According to such structure, an advantage at a time when the structure of a resonator is formed to a complate gain confinement type or a complete index confinement type can be kept at a level in a certain extent. As a result, practically sufficient performance can be displayed in the points of astigmatism, threshold currents, noise strain characteristics by modal noises, etc. |
