| 摘要 |
<p>PURPOSE:To stabilize a photoelectric conversion output for a prolonged time by leaving a sensor using amorphous Si as a photoconductive layer as it is for 2hr in an atmosphere at a temperature lower than a temperature after preparation or during a process, bringing the dark conductivity of the photoconductive layer to 10<-7>/OMEGAcm or more at room temperature and irradiating a light-receiving section on non-operation. CONSTITUTION:Beams having not more than 750nm wavelength having samll amount of heat-ray components are projected on the formation of an a-Si layer or just after the formation of an opposite electrode, and the whole is treated for 2hr, preferably, 30min or more at 200-80 deg.C lower than a maximum temperature during manufacture. An atmosphere is not specified, and the time is determined by a temperature, the effect of treatment, etc. When a V group element gas is added during the vapor phase growth of a-Si, conductivity on light and darkness is controlled easily. When optical signals are not inputted, a light-receiving section for a sensor is irradiated by a light source under the same conditions as mentioned above, and the value of conductivity is kept stably at all times. According to such constitution, a photoelectric conversion input device stably enabling inputs for a prolonged time is obtained even when using a-Si, which has been regarded as improper and dark conductivity thereof just after preparation or just after heat treatment extends over 10<-7>/OMEGAcm or more.</p> |
