| 摘要 |
PURPOSE:To strengthen element surface protection, and to check generation of a short between pad layers when the pad electrodes of the plural number are arranged close on a semiconductor chip by a method wherein bump layers are provided at the positions separated from the pad electrodes to be connected to the pad electodes by trimetal layers. CONSTITUTION:Al electrodes 2 of the plural number of pieces are formed on an Si chip 1, and etching is performed applying a resist mask 3 to form square- shape spectables type holes 10. A three layer film 4 of Ni-Cr-Au is covered thereon, etching is performed applying a resist mask 5, bump layers 8 according to a stand-off (Cu) 6 and solder 7 are formed at the places separated from the pad electrodes 2, and the layer 4 is utilized for connecting lead wires. Protective layers 9, the trilayer film 4 and a resist 5 existing excessively at the peripheries of the bumps are lifted off according to an ultrasonic process in a solvent. According to this method, the three layer film 4 can be lifted off completely even when the interval between the bumps 8 is l2 or less, and specially a short circuit to be generated according to molten solder at joining time can be prevented. |
