发明名称 VACUUM VAPOR DEPOSITION APPARATUS
摘要 PURPOSE:To form a vapor deposition layer on a substrate in a high accuracy pattern, in performing vacuum vapor deposition due to electron beam on the surface of a substrate in a vacuum tank, by arranging heat blocking intermediate layer, which is not reacted with a substance to be vapor deposited and has high heat resistance, to a recessed part for receiving the substance to be vapor deposited. CONSTITUTION:A substrate 10 to be subjected to vapor deposition treatment is placed in a vacuum tank 7 and an electron beam resist film patterned to a desired pattern is formed to the surface thereof. A substance 8 to be vapor deposited such as Au, Pt or Al is put in the recessed part of a cooling base stand 3 and heated and evaporated by electron beam 7 generated from a filament 6 to be vapor deposited to the surface of the substrate 10 other than the resist film. In this case, by providing a heat blocking intermediate layer 11 is provided in the recessed part for the substance 8 to be vapor deposited, the substance 8 to be vapor deposited is easily evaporated by electron beam 7 with reduced power. Therefore, a vapor deposition film having a high accuracy pattern can be formed without generating the peeling of the resist film caused by X-rays generated by using large power electron beam as is conventional.
申请公布号 JPS6033349(A) 申请公布日期 1985.02.20
申请号 JP19830141960 申请日期 1983.08.04
申请人 FUJITSU KK 发明人 KOSEMURA KINSHIROU;YAMASHITA YOSHIMI;ISHIWARI HIDETOSHI;IMAMURA HIROSHI;KOTANI KOUICHIROU
分类号 C23C14/30;H01L21/205;H01L21/285 主分类号 C23C14/30
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