| 摘要 |
PURPOSE:To improve characteristics of a single crystal semiconductor and to control the diameter satisfactorily by impressing magnetic field to molten starting material in a crucible and using simultaneously a solid image pick-up element as a photodetector part of diameter control mechanism. CONSTITUTION:A solid image pick-up element e.g. a CCD image sensor 13 is provided to the outside of a measuring window 9 at the top surface of a chamber 1, and is connected electrically to a diameter control mechanism. Further, an annular superconductive coil 14 is provided to the external periphery of the chamber 1. Since magnetic field in the perpendicular direction is impressed to the molten silicon 11 by the superconductive coil 14 in this pulling device, the component in the horizontal direction of the convection is effectively retarded chiefly. As the result, characteristics in the single crystal silicon 12 are made uniform. Further, since a CCD image sensor 13 is used, influence of the magnetic field is excluded. Moreover, the control of diameter of single crystal silicon 12 is satisfactorily performed even at time of neck down or in vibration of the single crystal silicon 12 due to its superior resolution. |
