| 摘要 |
PURPOSE:To contrive to improve the characteristics of a semiconductor element so as to provide a higher withstand voltage with a simple structure by a method wherein variation of the volume of electric insulating oil is absorbed by the elastic deformation of a flange part and the U-shaped groove thereof. CONSTITUTION:External electrodes 33a and 33b are mounted on both main surfaces of the surface and the back surface of a semiconductor element 30, a lower part flange 34b is mounted between the lower end part of an insulating cylinder 31 and the external electrode 33b provided on the back surface side, and an upper part flange 34a is mounted between the upper end part of the insulating cylinder 31 and the external electrode 33a provided on the external surface. The upper flange 34a is bent between the external electrode 33a and the insulating cylinder 31, and a hollow part 33c, which interpenetrate each other in the region surrounding the semiconductor element 30, is formed by this bending part. Moreover, a groove 34c, whose section is nearly a U- shape, is formed at the joint part between the external electrode 33a and the upper flange 34a in such a way as to surround the external electrode 33a. The upper flange 34a is so designed as to elastically deform when an external force is applied to the flange 34a by the U-shaped groove 34c and the hollow part 33c. |
