| 摘要 |
PURPOSE:To obtain a power semiconductor module substrate which has preferably insulating withstand strength and excellent heat sink property by interposing an active metal layer of Ti, Zr or Hr or an alloy layer of an active metal and Cu in a junction between an AlN member and a Cu member. CONSTITUTION:A Ti foil is inserted to a junction of AlN plate 11 and a Cu plate 12, set in a hot press, pressure is applied, and the junction is melted by high frequency heating, thereby obtaining a power semiconductor module substrate 14 of the structure that the Cu plates 12... are bonded through alloy layers 13... which include Cu and Ti to the plate 11. Semiconductor elements 15... are mounted through Pd-Si solder 16 to the plate 12.... Thus, a large quantity of heat can be preferably dissipated from the elements 15..., by the plates 12... and the plate 11. |
