发明名称 Semiconductor device
摘要 A solder joint between a semiconductor substrate and an electrode is disclosed in which that principal surface of the semiconductor substrate where an n-type semiconductor layer is exposed is bonded to the electrode with brazing solder, and the brazing solder includes aluminum solder provided on the side of the semiconductor substrate and copper solder provided on the side of the electrode. Since solid phase adhesion can be achieved between aluminum and copper even at temperatures below an eutectic temperature of 548 DEG C., the semiconductor substrate can be soldered to the electrode at the low temperatures.
申请公布号 US4500904(A) 申请公布日期 1985.02.19
申请号 US19830544119 申请日期 1983.10.20
申请人 HITACHI, LTD. 发明人 ONUKI, JIN;SOENO, KO;MORITA, KEIICHI;ONODERA, HISAKITHI
分类号 H01L21/52;H01L21/58;H01L21/60;H01L23/051;H01L23/492;(IPC1-7):H01L23/48 主分类号 H01L21/52
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