| 摘要 |
PURPOSE:To give no damages to the crystal and inhibit the diffusion of each layer dopant by a method wherein a polycrystalline film is formed on a double- hetero structure on a semiconductor substrate, and then partly single-crystallized in stripe form by a heating means. CONSTITUTION:An N-AlxGa1-xAs layer 11, an AlyGa1-yAs layer 10 (0<=y<x) 12, and a P-AlxGa1-xAs layer 13 are grown on an N<+> GaAs single crystal substrate 10 successively by epitaxial growing method respectively as single crystals, and a P-GaAs polycrystalline layer 25 is grown thereon. Next, after the surface is washed, the grown surface is scanned with a laser beam at approx. 5mm./sec, thus forming a single crystal region 24. As a result, a stripe structure for current restriction formed at intervals l of 250mum can be obtained. |
