| 摘要 |
PURPOSE:To obtain a photovoltaic element of high efficiency at the photovoltaic element having P-I-N structure by a method wherein the element is so constructed as to make the P type layer and the N type layer to have optically forbidden band widths larger than any part of the I type layer. CONSTITUTION:A P type amorphous silicon layer 3 introduced with carbon atoms, an intrinsic amorphous silicon layer 4, an N type amorphous silicon layer 5 introduced with carbon atoms, and a metal electrode 6 of high reflectivity are formed on a transparently conductive film 2 consisting of an ITO film, an SnO2 film or two layer film of the ITO film and the SnO2 film on a glass substrate 1. The P type layer 3 and the N type layer 5 become to junction type photovoltaic elements having larger optically forbidden band widths as compared with the I type layer 4, when light enters from the P type layer 3, light of long wavelength not absorbed completely at the I type layer 4 is not almost absorbed at the N type layer 5, but reflected by the Ag electrode 6, and absorbed again at the I type layer. It can be made as possible to make thickness of only the I type layer thin, and optoelectric conversion efficiency is enhanced. |
