发明名称 PHOTOCHEMICAL VAPOR GROWTH DEVICE
摘要 PURPOSE:To form a thicker film by providing a non-film forming gas layer forming means, which shapes a non-film forming gas layer through which a film is not formed on the surface of a transparent board by beams having a specific wavelength, while being brought into contact with the surface on the reaction chamber side of the transparent board. CONSTITUTION:A reaction gas is introduced from a gas introducing port 209 and enters into a reaction chamber 207, and is drawn by a vacuum from an exhaust port 210. A gas path 211 is shaped in a transparent board 208, and the transparent board has structure in which gas, which does not react with the reaction gas and does not absorb beams having wavelengths of 300nm or less from a low pressure mercury lamp 202, such as N2, Ar, He or the like, which passes through a gas introducing port 212, is blown off from blow-off ports 213. Accordingly, the gas entering from the reaction-gas introducing port 209 into the reaction chamber 207 is interrupted by a non-film forming gas layer consisting of N2, etc. ejected from the blowoff ports 213 formed brought into contact with the surface on the reaction section side of the transparent board 208, and does not reach to the surface of the transparent board 208.
申请公布号 JPS6030122(A) 申请公布日期 1985.02.15
申请号 JP19830137985 申请日期 1983.07.28
申请人 NIPPON DENKI KK 发明人 HAMANO KUNIYUKI
分类号 H01L21/205 主分类号 H01L21/205
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