| 摘要 |
PURPOSE:To measure the repeat accuracy of a main pattern by forming a second auxiliary pattern forming a pair with a first auxiliary pattern outside a main pattern shaping region in a wafer through exposure. CONSTITUTION:A first auxiliary pattern 2 previously arranged outside a main pattern for a reticle for a reducing projection exposure device is exposed outside a main pattern shaping prearranged region in an Si substrate 1. Main pattern regions 4 in which the main patterns are exposed to each chip 3... of the substrate 1 are formed. The main pattern region 4 is formed under the state in which a first auxiliary pattern 2 is coated with a mask 5. A second auxiliary pattern 5 forming a pair with the first auxiliary pattern 2 is exposed outside the main pattern region 4 in the Si substrate 1 while masking the first auxiliary pattern 2 and the main pattern. |
