| 摘要 |
PURPOSE:To simply and continuously obtain the titled thin film semiconductor of high quality as well as to enable to easily form them into a large area by a method wherein, in the case of the thin film semiconductors to be used for photoelectromotive elements, a germanium ion and a specific gas ion are collided with an electrode substrate under the condition of high vacuum by applying high emergy. CONSTITUTION:Polycrystalline germanium is fed to the crucible 141 of an electron beam evaporating source 14, and then air is exhausted from an air exhaust port 13 by a device on the exhaust system. When the degree of vacuum has been stabilized, one of hydrogen gas, the mixed gas of hydrogen and diborane and the mixed gas of hydrogen and phosphine is introduced from a gas introducing pipe 16 by adjusting valves 26-29 in such a manner that the partial pressure thereof will become in the range of 8X10<-4>Torr. to 1X10<-5>Torr. High energy is given to an ion by applying negative DC high voltage to a substrate holder 18 from a power source 22, the ion is incidented on the surface of an electrode substrate 19, and through these procedures the amorphous germanium thin film, which is a thin film semiconductor, can be formed. |
