| 摘要 |
PURPOSE:To align marks easily by forming the marks to at least two chips without forming mask alignment marks corresponding to all chips to a mask substrate when a bump electrode for a semiconductor device is shaped through a photoetching method. CONSTITUTION:When preparing a mask substrate 21, a repeater device, etc., are used, and a chip (a') with a mask pattern and a chip (b') with a mask alignment mark are formed separated by grid lines (c) as chip borders. In the constitution, a mask alignment mark is not formed to the chip (a') with the mask pattern, and the position of an electrode bump is determined by using the mask alignment mark shaped to the chip (b'). Accordingly, chips 23 and 23' consisting of the chips (b') are formed only in regions, in which mask pattern sections 22 are extremely few, in the mask substrate 21, and the marks are aligned simply and workability is improved. |
