| 摘要 |
PURPOSE:To lower a heating temperature, and to obtain a stable amorphous Si thin-film by applying DC voltage to one of a pair of discharge electrodes when a blank material, to which amorphous Si is to be formed, is placed on a glass substrate, the electrodes are faced opposed to the surface of the blank material, electricity is discharged, and the blank material is brought to an amorphous state. CONSTITUTION:An SiCl4 blank material for forming amorphous Si is placed on a glass substrate 4, and a pair of electrodes 2 and 3 mutually running parallel at regular intervals from the blank are faced to the surface of the blank. The electrodes 2 and 3 are connected to a high-frequency power supply 1, and arc discharge is generated between these electrodes to change the blank material into an amorphous Si thin-film. In the constitution, a plus pole for a DC power supply 5 is connected previously to one electrode 3, and DC voltage is applied on a discharge. Accordingly, high-frequency voltage is increased up to a DC voltage level from the power supply 5, and sufficiently large discharge energy is generated without resulting in a temperature rise even by the small high-frequency power supply. |
