Silicon photodiode with n-type control layer

摘要

A p- nu -n Si photodiode having an n-type control layer extended into the silicon body from a portion of the surface contiguous to that portion from which a p-type region extends. Photodiodes incorporating this control layer have a much higher junction resistance. The invention also includes an improved method of making a photodiode which has a reduced number of processing steps. The improvement comprises implanting As or Sb into the surface of a nu -type Si body to form an n-type layer prior to the steps of passivating the surface and forming a p-type region extending into the body from the surface.