| 摘要 |
PURPOSE:To lessen the fatigue of workers by acceleration of the measuring speed by a method wherein the average unit area is determined by calculation for each wafer, or determined by calculation more in detail for each measuring point. CONSTITUTION:Etch pit images (i) are cut out of the image of wafer surface, thus determining the area Si. On the basis of the shape, etch pit images independent and not superposed are discriminated from the assembly of etch pit images superposed. Then, the average unit area Ap of the independent etch pit images is determined. The area Sk of the assembly of etch pit images (k) superposed is divided by the area Ap, and accordingly the number of etch pits nk contained therein is calculated. The number of independent etch pits and the number nk of etch pits the assembly of etch pit images contains are added into the total number N of etch pits. |
