| 摘要 |
PURPOSE:To obtain a large capacitance value by a method wherein a plurality of conductive wirings are arranged on a semiconductor chip in proximity to each other, which are then covered with an insulation film. CONSTITUTION:Arranged at small intervals between each other, a plurality of the conductive wirings 12 forming electrodes opposed to each other are provided on the semiconductor chip 1. The insulation film 13 forming a dielectric covers the wirings 12. Thereby, the large capacitance value can be obtained with a pair of the wirings 12 as responding electrodes and the film 13 as the dielectric. It is sufficient to increase the height and the length of the wiring 12, and then to reduce the interlinear distance, in order to increase the capacitance value. Thus, the large capacitance value can be obtained without the increase of chip area. |
