| 摘要 |
PURPOSE:To lower contact resistance, to improve the morphology of the surface of an ohmic electrode and to reduce the area of the electrode by forming a first layer for the ohmic electrode having multilayer structure to an N type GaAs layer in an AuGe layer and bringing the thickness of the first layer to 350Angstrom or less. CONSTITUTION:An N type GaAs layer 2 is formed on a semi-insulating GaAs substrate 1. The N type GaAs layer 2 is formed by implanting Si ions at 1.5X 10<13>does/cm<2>.100keV and activating the ions. An AuGe layer 3, an Ni layer 4 and an Au layer 5 are shaped on the layer 2. These layers 3, 4, 5 are formed through several evaporation in thickness of 300Angstrom , 300Angstrom and 1,000Angstrom and patterning by a lift-off method. An ohmic contact is obtained between the N type GaAs layer 2 and the AuGe layer 3 through ohmic heat treatment. The morphology of the surface is improved by bringing the thickness of the AuGe layer 3 to 350Angstrom or less. |
