| 摘要 |
PURPOSE:To check plasma glow discharge to become unstable, and to enable to manufacture a thin film of amorphous silicon, etc. in a constant condition always by a method wherein emission intensity of plasma glow discharge is received to be detected by a photosensor, emission intensity is fed back to the electric power source side, and an electric power source is so controlled as to make emission intensity to be fixed. CONSTITUTION:To deposite amorphous silicon on substrates 4, after the inside of a reaction oven 1 is exhausted according to an exhaust pump 9, raw material gas of hydrogenated silicon, etc. is introduced into the reaction oven 1 through a flow rate controller 12, a valve 13 from a gas cylinder box 11. A high-frequency voltage is applied between plane electrodes 2, 3 according to an electric power source 5 to generate plasma glow discharge between both the electrodes. Amorphous silicon is deposited in order also on the surfaces of both the electrodes 2, 3 in addition to the substrate 4 during discharge decomposition is performed. The output voltage of the high-frequency electric power source 5 is controlled according to actions of a photosensor 6 to detect emission intensity of plasma glow discharge, and a controller 8 to decompose raw material gas in a fixed condition always, and amorphous silicon is deposited on the prescribed substrate. |
