| 摘要 |
PURPOSE:To prevent the disconnection of wiring due to the second conductive layer on the following part and the exposed part of a contact part by elimination of the stepwise difference of an aperture by method wherein the aperture for contact formation is filled with the first conductive layer. CONSTITUTION:A field oxide film 2 and a thin oxide film 3 are formed on a P type semiconductor substrate 1, and an N<+> diffused layer 4 is formed, thereafter an interlayer insulation film 5 and a photo resist film 6 are formed over the entire surface. After the film 6 is exposed and developed, the aperture 7' is formed by etching the layer 5 and the film 3 with the film 6 as a mask. After the film 6 is removed, an Al layer 12 is formed over the entire surface, and then a mask 13 for Al etching is formed. The layer 12 is selectively removed by means of the mask 13, which mask is then removed. An Al wiring 8' is formed thereon. In this case, the aperture 7 has no stepwise difference because of being filled with the layer 12. Therefore, the wiring 8' is not disconnected. Besides, the contact part 10 of the layer 4 does not expose. |
