| 摘要 |
PURPOSE:To reduce DC resistance without increasing an element area and without deterioration of response speed due to the capacity to the ground by arranging stripe parts of a comb shape Schottky gate electrode and stripe parts of a comb shape ohmic electrode alternately. CONSTITUTION:A comb shape Schottky gate electrode 36 and a comb shape ohmic electrode 35, formed on an operating layer 37, are engaged with each other. DC resistance Rs is composed of contact resistance between the ohmic electrode 35 and the operating layer 37 and resistance of the operating layer 37 between the ohmic electrode 35 and the Schottky electrode 36. A stripe width of the Schottky gate electrode 36 is 3mum or less and a gap width between the two electrodes is 2mum or less. |
