| 摘要 |
PURPOSE:To realize high integrity and facilitate multilayer wiring by a method wherein a contact hole is formed without tapering and a recess at the contact hole part is reduced when a wiring is formed in the contact hole. CONSTITUTION:An element separation domain 23 and a diffusion layer domain 22 are formed on a semiconductor substrate 21. A layer insulating film 24 and a lift-off layer 25 are deposited on the domains 22, 23 in order. A contact pattern is formed in a photoresist film 26. The lift-off layer 25 and the insulating film 24 are etched through an aperture of the resist film 26 to form a contact hole without tapering. A wiring conductor is deposited separately as an aluminum 27 in the contact hole and an aluminum 28 outside the contact hole. By lift-off process, a step between the surface of the aluminum 27 and the insulating film 24 is reduced. Therefore, when a wiring contact is formed by depositing an aluminum 29, no recessed part is formed in the aluminum on the contact. |
