| 摘要 |
PURPOSE:To contrive improvement of electric characteristics of an element by a method wherein the non-operational property of an oxygen-ion injecting process wherein a large quantity of oxygen-ion is implanted into a silicon film is improved, and a high temperature annealing process is unnecessitated. CONSTITUTION:An oxide film 2 is grown on an N type silicon substrate 1. An aperture part 3 is provided on said oxide film 2, and the substrate 1 is exposed. Then, after a polycrystalline silicon film 4 has been grown, all the polycrystalline silicon film excluding the part 5 whereon a gate control type diode will be formed is removed. A single crystal film is grown by recrystallizing a polycrystalline silicon film 5 again. Then, the above is held in an oxidizing furnace, and a gate oxide film 6 is grwon. Subsequently, a polycrystalline silicon film 7 is deposited, and the parts 8 and 9 of the single crystal region are exposed. An N<+> electrode is formed on a gate region 7, an N<+> electrode is formed on a cathode region 8, and a P<+> electrode is formed on an anode region 9 respectively. |
