发明名称 FIELD EFFECT TRANSISTOR DEVICE
摘要 PURPOSE:To hold the inside of a circuit in a constant initial state even when a voltage of a power source terminal has dropped, by combining and connecting a transistor (TR) operated by a prescribed threshold, in a complementary insulating gate field effect TR device. CONSTITUTION:When a potential VC is applied to a power source terminal V0 in a transient state, a contact 3 has a potential V1 until a power supply voltage becomes a potential VA (a threshold voltage VT of TRs M6, M8, M10-M16) from V1, and when the power supply voltage further rises to the VC side from VA, said contact is varied in a state of the power source -VT therby, contacts 4 -7 are varied, respectively, and the contacts 6, 7 become the potential VC and V1. When an input signal IN is inputted, the contacts 3-5 are not varied, but the contacts 6, 7 are varied as a state B'. In this state, when the power supply voltage becomes below VD, said contacts become a state C', the TR M12 becomes on, and the contact 6 is varied to the power source potential. Thereafter, when the power supply voltage rises, the contacts 6, 7 coincide with an initial state when the power source is applied.
申请公布号 JPS6020624(A) 申请公布日期 1985.02.01
申请号 JP19830129009 申请日期 1983.07.15
申请人 NIPPON DENKI KK 发明人 TSUKUDA FUMIAKI
分类号 H03K3/356;H03K17/22;H03K17/687 主分类号 H03K3/356
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