MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To remove the disconnection of an Al electrode wiring, and to form the electrode wiring having high reliability by adequately sloping the shape of the side surface of a contact window having a large stepped section. CONSTITUTION:A resist pattern 7 for forming a contact window is shaped through a normal photolithography process. First reactive ion etching treatment by a Freon group gas is executed. O2 gas is introduced to an etching chamber, and a resist is removed. Second reactive ion etching treatment by the Freon group gas is executed to the whole surface of an inter-layer insulating film 4 again, and executed until the inter-layer unsulating film in which the contact window section is thinned is removed completely. The end section of the contact window takes an adequately sloped shape 9 because the etching rate of the steeply rising section 8 of the upper section of the side surface of the contact window is faster than that of a flat section and the section 8 is removed selectively in second reactive ion etching. Al is applied and formed to shape an electrode wiring 5.